Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel

ABSTRACT

A passivation layer solution composition is provided A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. 
     
       
         
         
             
             
         
       
     
     In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Divisional of U.S. application Ser. No. 13/534,752filed on Jun. 27, 2012 which claims priority under 35 U.S.C. §119 toKorean Patent Application No. 10-2011-0106990 filed in the KoreanIntellectual Property Office on Oct. 19, 2011, the disclosure of whichis incorporated by reference herein in its entirety.

TECHNICAL FIELD

The present invention relates to a passivation layer solutioncomposition, a thin film transistor array panel and a method formanufacturing the thin film transistor array panel.

DESCRIPTION OF THE RELATED ART

Generally, a thin film transistor (TFT) array panel is used as a circuitboard for independently driving pixels in a liquid crystal display or anorganic electro-luminescent (EL) display device. The thin filmtransistor array panel includes a scanning signal line or a gate linetransmitting a scanning signal, an image signal line or a data linetransmitting an image signal, a thin film transistor connected to thegate line and the data line, and a pixel electrode connected to the thinfilm transistor.

The thin film transistor includes a gate electrode that is a portion ofthe gate wire, a semiconductor layer forming a channel, a sourceelectrode that is a portion of the data wire, and a drain electrode. Thethin film transistor is a switching element controlling an image signaltransmitted to the pixel electrode through the data wire according tothe scanning signal transmitted through the gate line.

When using the oxide semiconductor as the semiconductor layer and copperas a wire having low resistance, when using a passivation layer made ofa conventional silicon oxide or silicon nitride, desirable thin filmtransistor characteristics are not realized and the wiring surface maybe oxidized.

SUMMARY OF THE INVENTION

An embodiment of the present invention provides a passivation layersolution composition, a thin film transistor array panel, and amanufacturing method thereof to provide solutions to the above problemswhen using an oxide semiconductor as a semiconductor layer and copper asa wire having low resistance.

A passivation layer solution composition according to an exemplaryembodiment of the present invention includes an organic siloxane resinrepresented by Chemical Formula 1 below:

In an exemplary embodiment of the present invention, each of the Rgroups of Chemical Formula 1 is independently a substituent selectedfrom the group consisting of a saturated hydrocarbon and an unsaturatedhydrocarbon having from. 1 to about 25 carbon atoms, and x and y areeach an integer from 1 to about 200, and each wavy line wherein eachwavy line indicates a bond to an atom or to an x siloxane unit or a ysiloxane unit, or a bond to an x siloxane unit or a y siloxane unit ofanother siloxane chain comprising x siloxane units or y siloxane unitsor a combination thereof.

In an exemplary embodiment of the present invention, the organicsiloxane includes at least one substituent selected from the groupconsisting of a saturated hydrocarbon and an unsaturated hydrocarbonhaving from 1 to about 25 carbon atoms, and includes from about 200 toabout 400 Si atoms.

In exemplary embodiment, each R substituent in Chemical Formula 1 isindependently selected from the group consisting of a methyl group, avinyl group, and a phenyl group.

In an exemplary embodiment the passivation layer solution compositionmay further include a solvent containing propylene glycolmonomethylether or propylene glycol monoethylacetate.

In an exemplary embodiment the passivation layer solution compositionmay include from about 4 wt % to about 25 wt % of an organic siloxaneresin of the invention.

In an embodiment of the organic siloxane resin of the invention, each ofthe R groups in Chemical Formula 1 is independently selected from thegroup consisting of a methyl group, a vinyl group, and a phenyl group.

In an exemplary embodiment the organic siloxane resin has a molecularweight of from about 100 to about 10,000.

In an exemplary embodiment the thin film array panel includes: asubstrate; a gate line, a semiconductor layer, a source electrode, and adata line including a drain electrode disposed on the substrate; and apassivation layer disposed on the gate line, the semiconductor layer,and the data line and includes an organic siloxane resin represented byChemical Formula 1 below.

In Chemical Formula 1, each of the R groups is a substituent selectedfrom the group consisting of a saturated hydrocarbon or an unsaturatedhydrocarbon having from 1 to about 25 carbon atoms, and x and y are eachindependently an integer from 1 to about 200, and wherein each wavy lineindicates a bond to an H atom or to an x siloxane unit or a y siloxaneunit, or a bond to an x siloxane unit or a y siloxane unit of anothersiloxane chain comprising x siloxane units or y siloxane units or acombination thereof.

In an exemplary embodiment the semiconductor layer of the thin filmarray panel may be formed of an oxide semiconductor.

In an exemplary embodiment the gate line of the thin film array panelmay include a lower layer including at least one metal selected fromtitanium, tantalum, and molybdenum, and an upper layer that includescopper or a copper alloy.

In an exemplary embodiment the data line of the thin film array panelmay include a lower layer that includes at least one metal selected fromtitanium, tantalum, and molybdenum; and an upper layer that includescopper or a copper alloy.

In an exemplary embodiment the thin film transistor array panel mayfurther include a pixel electrode disposed on the passivation layer, thepassivation layer having a contact hole, and the pixel electrode beingconnected to the drain electrode through the contact hole.

In an exemplary embodiment each of the R groups of Chemical Formula 1 isa substituent independently selected from the group consisting of amethyl group, a vinyl group, and a phenyl group.

In an exemplary embodiment the organic siloxane resin has a molecularweight of from about 100 to about 10,000.

In an exemplary embodiment the thin film transistor array panel mayfurther include a gate insulating layer disposed on a substrate.

In an exemplary embodiment the gate insulating layer may include atleast one silicon compound selected from the group consisting of siliconoxide, silicon nitride, and silicon oxynitride.

A method of manufacturing a thin film transistor array panel accordingto an exemplary embodiment of the present invention includes forming athin film transistor including a gate line, a semiconductor layer, asource electrode, and a data line on a substrate, coating a solutionincluding an organic siloxane resin represented by Chemical Formula 1and covering the thin film transistor on the substrate to form apreliminary passivation layer, illuminating the preliminary passivationlayer by using a mask, and developing the preliminary passivation layerto form a passivation layer having a contact hole.

In an exemplary embodiment of the thin film transistor array panelmanufacturing method according to the present invention, in ChemicalFormula 1, each of the R groups is independently selected from the groupconsisting of a saturated hydrocarbon and an unsaturated hydrocarbonhaving from 1 to about 25 carbon atoms, and x and y are eachindependently an integer from 1 to about 200, and each wavy linerepresents a bond to an H atom, or a crosslinking covalent bond to an xor a y siloxane unit of another siloxane chain haying the structure ofChemical Formula 1

The solution that includes the organic siloxane resin represented byChemical Formula 1 may include either or both of propylene glycolmonomethylether and propylene glycol monoethylacetate.

The solution that includes the organic siloxane resin represented byChemical Formula 1 includes from about 4 wt % to about 25wt % of theorganic siloxane resin.

In the organic siloxane resin represented by Chemical Formula 1, each Rgroup is independently selected from the group consisting of a methylgroup, a vinyl group, and a phenyl group.

The organic siloxane resin may have a molecular weight of from about 100to about 10,000.

The semiconductor layer may be formed of an oxide semiconductor.

The gate line may be formed of a lower layer including at least onemetal selected from titanium, tantalum, and molybdenum; and an upperlayer that includes copper or a copper alloy.

The data line may be formed of a lower layer including at least onemetal selected from titanium, tantalum, and molybdenum; and an upperlayer that includes copper or a copper alloy.

When using the passivation layer including the organic siloxane resinaccording to an embodiment of the present invention, it is not necessaryto form an additional capping layer on the wiring when using wiringhaving low resistance such as copper, and an excellent thin filmtransistor characteristic may be obtained using a semiconductor layer ofan oxide semiconductor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a layout view of one pixel of a thin film transistor arraypanel according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II′ of FIG. 1.

FIGS. 3-11 are cross-sectional views taken along the line II-II′ of FIG.1 to explain a manufacturing method of a thin film transistor arraypanel according to an exemplary embodiment of the present invention.

FIG. 12 is a graph showing a characteristic of a thin film transistoraccording to an exemplary embodiment of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Exemplary embodiments of the present invention will be described indetail with reference to the accompanying drawings. However, the presentinvention is not limited to the exemplary embodiments described herein,and may he embodied in other forms. Rather, exemplary embodimentsdescribed herein are provided to thoroughly and completely understandthe disclosed contents and to sufficiently transfer the ideas of thepresent invention to a person of ordinary skill in the art.

In the drawings, the thicknesses of layers and regions are exaggeratedfor clarity. It is to be noted that when a layer is referred to as being“on” another layer or substrate, it can be directly formed on the otherlayer or substrate or can be formed on the other layer or substrate witha third layer interposed therebetween. Like constituent elements aredenoted by like reference numerals throughout the specification.

A passivation layer solution composition according to an exemplaryembodiment of the present invention includes an organic siloxane resinrepresented by Chemical Formula 1 below.

In Chemical Formula 1, each R is a substituent independently selectedfrom a saturated hydrocarbon or an unsaturated hydrocarbon having from 1to about 25 carbon atoms, and each of x and y independently may be from1 to about 200. It should be understood that the individual x and yunits of the siloxane may be intermingled and are not limited to acontiguous chain of x siloxane units covalently linked to a contiguouschain of y siloxane units, although this combination is possible, and iswithin the scope of Chemical Formula 1. Also, in an embodiment of thepresent invention in Chemical Formula 1, each of the R groups may beindependently selected from the group consisting of a methyl group, avinyl group, and a phenyl group. The wavy line of Chemical Formula 1indicates that a bond from the oxygen atom of an x-unit or of a y-unitof the siloxane is bonded to a hydrogen atom or to another x siloxaneunit or another y siloxane unit. In a case that the oxygen atom of anx-unit or a y-unit of the siloxane is bonded to another x siloxane unitor another y siloxane unit, the oxygen atom of the x-unit or the y-unitof the siloxane in Chemical Formula 1 is bonded to a silicon (Si) atomof another x siloxane unit or another y siloxane unit. Therefore,Chemical Formula 1 may have a pattern such that a plurality of x-unitsor a plurality of y-unit or any a combination thereof may occur inup/down direction and in left/right direction.

The passivation layer solution composition according to an exemplaryembodiment of the present invention may include a solvent includingpropylene glycol monomethylether, propylene glycol monoethylacetate, orpropylene glycol monomethylacetate. Also, the solvents included in thepassivation layer solution composition may be used individually or twoor more may be mixed for use, and the solvent having a boiling pointlower than 100° C. and the solvent (a high boiling solvent) having aboiling point from 120° C. to 160° C. may be mixed for use. The highboiling solvent is volatilized in a temperature less than a temperaturethat coating, drying, and hardening are performed when forming a filmstructure to prevent a void, and dries the film at a low speed, having afunction of improving flatness of the film structure. With thiscombination of solvents, a solvent selected from the group includingethanol, 2-propanol, and 2-butanol, and the solvent selected from thegroup including propylene glycol monomethylether, propylene glycolmonomethylacetate, methyl isobutyl ketone, and n-propylacetate may bemixed for the above-described use.

In an embodiment, the organic siloxane resin represented by ChemicalFormula 1 may be included in the passivation layer solution compositionto a content of from about 4 wt % to about 25 wt %. Also, the molecularweight of the organic siloxane resin may be from about 100 to about10,000.

In an embodiment, the passivation layer solution composition accordingto the present exemplary embodiment may further include a thermalhardener having a content of from about 1 wt % to about 5 wt %. However,in an embodiment of the present invention, the thermal hardener may beomitted.

In an embodiment, the organic siloxane resin of Chemical Formula 1 isformed by polymerization through a hydrolase reaction of a compound Aand a compound B represented by Chemical Formula 2 and Chemical Formula3 below. The compound A has a structure randomly includingmethylsiloxane, vinylsiloxane, and tetrahydroxysiloxane in apredetermined ratio, and the compound B has a structure randomlyincluding phenylsiloxane, vinylsiloxane, and tetrahydroxysiloxane in apredetermined ratio.

Next, a thin film transistor array panel including a passivation layerformed by using the passivation layer solution composition according toan exemplary embodiment of the present invention will be described.

FIG. 1 is a layout view of one pixel of a thin film transistor arraypanel according to an exemplary embodiment of the present invention.FIG. 2 is a cross-sectional view taken along the line II-II′ of FIG. 1.

Referring to FIGS. 1 and 2, a plurality of gate lines 121 are formed onan insulation substrate 110 made of transparent glass or plastic.

The gate lines 121 transmit gate signals and mainly extend in ahorizontal direction. Each gate line 121 includes a plurality of gateelectrodes 124 protruding from the gate line 121.

The gate lines 121 and the gate electrodes 124 may have a dual-layerstructure configured by lower layer 124 p and upper layer 124 r. Thelower layer 124 p may be comprise a metal or a metal alloy selected frommolybdenum (Mo), a molybdenum alloy, chromium (Cr), a chromium alloy,titanium (Ti), a titanium alloy, tantalum (Ta), a tantalum alloy,manganese (Mn) and a manganese alloy. The upper layer 124 r may comprisea metal. or a metal alloy selected from aluminum (Al), an aluminumalloy, silver (Ag), a silver alloy, and copper (Cu) and a copper alloy.In the present exemplary embodiment, the gate lines 121 and the gateelectrodes 124 have the dual-layered structure, however they are notlimited thereto, and may be made of a single-layered structure or atriple-layered structure. In the case of a triple-layer structure,layers having different physical properties may be combined in the gatelines 121 and the gate electrodes 124.

In an embodiment of the invention, a gate insulating layer 140 made ofan insulating material such as silicon oxide, silicon nitride, orsilicon nitroxide is formed on the gate line 121.

In an embodiment of the invention, a plurality of semiconductor layers151 comprising an oxide semiconductor are formed on the gate insulatinglayer 140. The semiconductor layers 151 mainly extend in a longitudinaldirection, and include a plurality of projections 154 extending towardthe gate electrodes 124.

In an embodiment of the invention, a plurality of data lines 171connected to a plurality of source electrodes 173 and a plurality ofdrain electrodes 175 are formed on the semiconductor layer 151.

In an embodiment of the invention, the data lines 171 transmit a datasignal and extend in the longitudinal direction intersecting the gatelines 121. Each data line 171 is connected to a plurality of sourceelectrodes 173 having a “U” shape and extending toward the gateelectrode 124.

In an embodiment of the invention, the drain electrode 175 is separatedfrom the data line 171 and extends in the center of the “U” shape of thesource electrode 173. The shape of the source electrode 173 and thedrain electrode 175 may be variously changed.

In an embodiment of the invention, a the data wire layer (171, 173, and175) including the data line 171, the source electrode 173, and thedrain electrode 175 has a dual-layer structure of lower layers 171 p,173 p, and 175 p, and upper layers 171 r, 173 r, and 175 r. The lowerlayers 171 p, 173 p, and 175 p may include a metal or a metal alloyselected from molybdenum (Mo) and a molybdenum alloy, chromium (Cr) anda chromium alloy, titanium (Ti) and a titanium alloy, tantalum (Ta) anda tantalum alloy, and manganese (Mn) and a manganese alloy, and theupper layer 171 r, 173 r, and 175 r may include a metal or a metal alloyselected from aluminum (Al) and a aluminum alloy, silver (Ag) and asilver alloy, and copper (Cu) and a copper alloy.

In an embodiment of the invention, a the projection 154 of thesemiconductor layer 151 includes an exposed portion that is not coveredby the data line 171 and the drain electrode 175 and a portion that isdisposed between the source electrode 173 and the drain electrode 175.The semiconductor layer 151 has substantially the same planar pattern asthe data line 171 and the drain electrode 175 except for the exposedportion of the projection 154.

In an embodiment of the invention, one gate electrode 124, one sourceelectrode 173, and one drain electrode 175 form one thin film transistor(TFT) along with the projection 154 of the semiconductor layer 151, anda channel of the thin film transistor are formed in the projection 154between the source electrode 173 and the drain electrode 175.

In an embodiment of the invention, a passivation layer 180 is formed onthe data line 171, the drain electrode 175, and the exposed projection154 of the semiconductor layer. The passivation layer 180 includes theorganic siloxane resin represented by Chemical Formula 1 below.

In Chemical Formula 1, each wavy line indicates a bond to an H atom orto an x siloxane unit or a y siloxane unit, or a bond to an x siloxaneunit or a y siloxane unit of another siloxane chain comprising xsiloxane units or y siloxane units or a combination thereof and each ofthe R groups is independently selected from a saturated hydrocarbon oran unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and xand y may each independently be from 1 to about 200. Also, in ChemicalFormula 1, each of the R groups may independently be a substituentselected from the group consisting of a methyl group, a vinyl group, anda phenyl group.

In an embodiment, the passivation layer 180 has a plurality of contactholes 185 exposing a portion of the drain electrode 175.

In the thin film transistor array panel according to an exemplaryembodiment, an additional capping layer is not formed between thepassivation layer 180 and the data wire layer (171, 173, and 175).

In an embodiment, a plurality of pixel electrodes 191 are formed on thepassivation layer 180. Each pixel electrode 191 is physically andelectrically connected to the drain electrode 175 through the contacthole 185, receiving a data voltage from the drain electrode 175. Thepixel electrode 191 that has received the data voltage generates anelectric field, together with a common electrode (not shown, but may beformed on the opposite display panel or a thin film transistor arraypanel) that receives a common voltage, determining the direction of theliquid crystal molecules in the liquid crystal layer (not shown) betweenthe two electrodes. The pixel electrode 191 and the common electrodeconstitute a capacitor (hereafter referred to as a “liquid crystalcapacitor”) to maintain the voltage even after the thin film transistoris turned off.

In an embodiment, the pixel electrode 191 may form a storage capacitorby overlapping a storage electrode line (not shown), such that theperformance of the liquid crystal capacitor that maintains the voltagecan be improved. The pixel electrode 191 may be made of a transparentconductor such as ITO or IZO.

The thin film transistor array panel of the liquid crystal display isdescribed as one example, however the present exemplary embodiment alsomay be applied to an organic light emitting device.

FIG. 3 to FIG. 11 are cross-sectional views taken along the line II-II′of FIG. 1 to explain a manufacturing method of a thin film transistorarray panel according to an exemplary embodiment of the presentinvention.

Referring to FIG. 3, a metal or metal alloy selected from molybdenum(Mo) and a molybdenum alloy, chromium (Cr) and a chromium alloy,titanium (Ti) and a titanium alloy, tantalum (Ta) and a tantalum alloy,and manganese (Mn) and a manganese alloy is deposited on an insulationsubstrate 110 made of transparent glass or plastic, and a metal or metalalloy selected from aluminum (Al) and a aluminum alloy, silver (Ag) anda silver alloy, and copper (Cu) and a copper alloy is deposited to formdual layers, and they are patterned to form a gate line 121 including agate electrode 124.

Thereafter, in an embodiment the photosensitive film (not shown) islayered and patterned, and the lower layer 124 p and upper layer 124 rare etched by using the patterned photosensitive film (not shown) as amask. At this time, the etchant used may be an etchant that is capableof simultaneously etching the lower layer 124 p and upper layer 124 r.

Referring to FIG. 4, in an embodiment the gate insulating layer 140, anoxide layer 150, a lower metal layer 170 p, and an upper metal layer 170r are deposited on the gate line 121 s and the gate electrodes 124.

The oxide layer 150 includes at least one metal selected from zinc (Zn),indium (In), tin (Sn), gallium (Ga), and hafnium (Hf), the lower metallayer 170 p may include a lower layer and an upper layer, and the lowerlayer may include a metal or a metal alloy selected from molybdenum (Mo)and a molybdenum alloy, chromium (Cr) and a chromium alloy, titanium(Ti) and a titanium alloy, tantalum (Ta) and a tantalum alloy, andmanganese (Mn) and a manganese alloy, and the upper metal layer 170 rmay include a metal or a metal alloy selected from aluminum (Al) and analuminum alloy, silver (Ag) and a silver alloy, and a copper (Cu) and acopper alloy.

A photosensitive film (a photoresist) is formed thereon and is patternedto form a first photosensitive film pattern 50. The first photosensitivefilm pattern 50 has a first region 50 a with a thick thickness and asecond region 50 b with a thin thickness. A thickness difference of thefirst photoresist pattern 50 may he formed by controlling an irradiatinglight amount by using a mask or may be formed by using a reflow method.In the case where the light amount is controlled, a slit pattern, alattice pattern, or a semi-transparent layer may be formed on the mask.The second region 50 b having a thin thickness corresponds to a positionat which the channel region of the thin film transistor is formed.

Referring to FIG. 5, in an embodiment by using the first photosensitivefilm pattern 50 as the mask, the lower metal layer 170 p and the uppermetal layer 170 r are etched by using an etchant that is capable ofsimultaneously etching the lower metal layer 170 p and the upper metallayer 170 r. Here, the etchant used may he the same as the etchant usedwhen etching the lower layer 124 p and the upper layer 124 r of the gatelines 121 and the gate electrodes 124.

In an embodiment as shown in FIG. 5, if the lower metal layer 170 p andthe upper metal layer 170 r are etched, the side of the lower metallayer 170 p and the upper metal layer 170 r covered by the firstphotosensitive film pattern 50 is also etched, and as a result theboundary of the lower metal layer 170 p and the upper metal layer 170 ris disposed inside regions A, B, and C where the first photosensitivefilm pattern 50 is formed.

At this time, the etchant etching the lower metal layer 170 p and theupper metal layer 170 r does not etch the gate insulating layer 140 orthe oxide layer 150.

In additional, the oxide layer 150 is etched by using the firstphotosensitive film pattern 50 as the mask.

In an embodiment referring to FIG. 6, the second region 50 b having thethin thickness in FIG. 5 is removed through an etch-back process. Atthis time, the first region 50 a is also etched such that the width andheight thereof are reduced, and the second photosensitive film pattern51 of FIG. 6 is formed. The second photosensitive film 51 is formed atregions A′, B′, and C′ that are smaller than regions A, B, and C of thefirst photosensitive film pattern 50 as shown in FIG. 5.

In an embodiment referring to FIG. 7, the lower metal layer 170 p andthe upper metal layer 170 r are etched with the etchant by using thesecond photosensitive film pattern 51 as the mask. Here, the upper metallayer 170 r may be wet-etched, and then the lower metal layer 170 p maybe dry-etched.

At this time, the lower metal layer 170 p is divided, forming the dataline (171 p and 171 r), the source electrode (173 p and 173 r), and thedrain electrode (175 p and 175 r) of the dual-layered structure. Also,the upper surface of the oxide layer 150 is exposed and then the oxidesemiconductor layer 151 including the projection 154 formed with thechannel of the thin film transistor is formed.

As described above, if photoresist patterns having different thicknessesare used, the oxide semiconductor 151 and 154 has substantially the sameplanar pattern as the lower layers 171 p, 173 p, and 175 p of the datalines 171, the source electrodes 173, and the drain electrodes 175.Meanwhile, the oxide semiconductor layer (151 and 154) except for theexposed portion between the drain electrode 175 and the source electrode173 has substantially the same plane pattern as the data line 171, thesource electrode 173, and the drain electrode 175.

Next, referring to FIG. 8, the photosensitive film pattern is removedthrough ashing.

Next, referring to FIG. 9, in an embodiment, the passivation layersolution including the organic siloxane resin represented by ChemicalFormula 1, the solvent such as propylene glycol monomethylether orpropylene glycol monoethylacetate, and the thermal hardener are coatedon the gate insulating layer 140, the source electrode 173, the drainelectrode 175, and the projection 154 of the oxide semiconductor layer151 to form a preliminary passivation layer 180 p.

Here, in Chemical Formula 1, each of the groups R is independentlyselected from a saturated hydrocarbon and an unsaturated hydrocarbonhaving from 1 to about 25 carbon atoms, and x and y may each be from 1to about 200, Also, in Chemical Formula 1, each R may independently be asubstituent selected from the group consisting of a methyl group, avinyl group, and a phenyl group, The wavy line of Chemical Formula 1 mayinclude that the oxygen atom of x-unit or an y-unit of the siloxane isbonded to a hydrogen atom or another x siloxane unit or another ysiloxane unit. In a case that the oxygen atom of an x-unit or a y-unitof the siloxane is bonded to another x siloxane unit or another ysiloxane unit, the oxygen atom of x-unit or an y-unit of the siloxane inChemical Formula 1 is bonded to a silicon (Si) atom in another xsiloxane unit or another y siloxane unit, Therefore, Chemical Formula 1may have a pattern such that a plurality of x-units or a plurality ofy-unit or a combination thereof may occur in up/down direction and inleft/right direction.

The coating of the passivation layer solution may use a method of spincoating, dip coating, bar coating, screen printing, slide coating, rollcoating, spray coating, slot coating, dip-pen nanolithography, inkjetprinting, or nano-dispensing.

Referring to FIG. 10 and FIG. 11, in an embodiment, a mask having anexposing region E and a blocking region B is aligned on the preliminarypassivation layer 180 p, and then light such as ultraviolet light isirradiated thereto. The light is blocked at a portion corresponding tothe contact hole 185 to be formed among the preliminary passivationlayer 180 p such that this portion is removed later. Accordingly, thepassivation layer 180 having the contact hole 185 is formed. Next, thepassivation layer 180 may be hardened through heat treatment.

Conventionally, when forming the passivation layer 180 by using chemicalvapor deposition (CND), it is difficult to form a thick layer because oftechnique limitations. Accordingly, a flatness layer to planarize thelayer must be additionally formed. However, in an exemplary embodiment,the passivation layer 180 is formed through the solution process byusing the coating method such that the flat passivation layer 180 havinga thick thickness may be formed through a single process. Accordingly,in an embodiment of the present invention, it is not necessary to formthe flatness layer to planarize the layer.

Also, the passivation layer 180 is formed through the solution processsuch that oxygen gas may be prevented from being generated in theprocess of forming the silicon oxide by the conventional CVD method thatoxidizes copper. Accordingly, in an embodiment of the present invention,it is not necessary to form a capping layer between the upper layers 171q, 173 q, and 175 q of the data line 171, the source electrode 173, andthe drain electrode 175 as the main wiring layer and the passivationlayer 180 such that the manufacturing process is simplified.

Also, according to an exemplary embodiment of the present invention, adifferent passivation layer material from the conventional is used suchthat that generation of hydrogen (H₂) that degrades the thin filmtransistor characteristic may be prevented when forming the passivationlayer that includes silicon nitride (SiNx).

Next, a transparent conductor such as indium tin oxide (ITO) or indiumzinc oxide (IZO) is deposited and patterned to form the pixel electrode191 electrically connected to the drain electrode 175, as shown in FIG.2.

FIG. 12 is a graph showing a characteristic of a thin film transistoraccording to an exemplary embodiment of the present invention. Indetail, FIG. 12 shows a drain current (Ids) according to a gate voltage(Vgs) in the thin film transistor including the passivation layerincluding the organic siloxane resin represented by Chemical Formula 1.

Referring to FIG. 12, the characteristic of the thin film transistor isshown according to the change of the drain current (Ids) according tothe gate voltage (Vgs).

While this invention has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

Description of Symbols 50 first photosensitive 51 second photosensitivefilm pattern film pattern 110 substrate 121 gate line 151 semiconductorlayer 154 protrusion 171 data line 173 source electrode 175 drainelectrode 180 passivation layer

Why is claimed is:
 1. A method manufacturing a thin film transistorarray panel, comprising: forming a thin film transistor including a gateline, a semiconductor layer, a source electrode, and a data line on asubstrate; coating a solution including an organic siloxane resinrepresented by Chemical Formula 1:

wherein in Chemical Formula 1, each of the R groups is independentlyselected from the group consisting of a saturated hydrocarbon and anunsaturated hydrocarbon having from 1 to about 25 carbon atoms, andwherein x and y are each independently an integer from 1 to about 200,wherein each wavy line indicates a bond to an H atom or to an x siloxaneunit or a y siloxane unit, or a bond to an x siloxane unit or a ysiloxane unit of another siloxane chain comprising x siloxane units or ysiloxane units or a combination thereof; covering the thin filmtransistor on the substrate to form a preliminary passivation layer;irradiating the preliminary passivation layer with light through a mask;and developing the preliminary passivation layer to form a passivationlayer having a contact hole.
 2. The method of claim 1, wherein thesolution including the organic siloxane resin represented by ChemicalFormula 1 includes at least one of propylene glycol monomethylether andpropylene glycol monoethylacetate.
 3. The method of claim 2, wherein thesolution including the organic siloxane resin represented by ChemicalFormula 1 includes from about 4 wt % to about 25 wt % of the organicsiloxane resin.
 4. The method of claim 3, wherein in Chemical Formula 1,each of the R groups is independently selected from the group consistingof a methyl group, a vinyl group, and a phenyl group.
 5. The method ofclaim 4, wherein the organic siloxane resin has a molecular weight offrom about 100 to about 10,000.
 6. The method of claim 1, wherein thesemiconductor layer is formed of an oxide semiconductor.
 7. The methodof claim 6, wherein the gate line is formed of a lower layer includingat least one of titanium, tantalum, and molybdenum; and an upper layerincluding copper or a copper alloy.
 8. The method of claim 7, whereinthe data line is formed of a lower layer including at least one oftitanium, tantalum, and molybdenum; and an upper layer including copperor a copper alloy.